TRANSISTOR BU508DF
GENERAL DESCRIPTION. High voltage, high-speed switching npn transistors in a fully isolated VCES Collector-Emitter Voltage 1500 V
VCEO Collector-Emitter Voltage 700 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 15 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Tempo di consegna: 1 / 3 GG CON CORRIERE - 2 / 6 GG. CON ALTRI METODI (PER SPEDIZ. IN ITALIA)